分离式半导体产品 SIB911DK-T1-E3品牌、价格、PDF参数

SIB911DK-T1-E3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SIB911DK-T1-E3 Vishay Siliconix MOSFET P-CH 20V PWRPAK SC75-6 0 1:$0.79000
25:$0.60680
100:$0.53550
250:$0.46412
500:$0.39270
1,000:$0.31238
SIB911DK-T1-E3 Vishay Siliconix MOSFET P-CH 20V PWRPAK SC75-6 0 1:$0.79000
25:$0.60680
100:$0.53550
250:$0.46412
500:$0.39270
1,000:$0.31238
SQJ964EP-T1-GE3 Vishay Siliconix MOSFET DUAL N-CH 60V PPAK 8SOIC 0 3,000:$1.28250
SI7964DP-T1-GE3 Vishay Siliconix MOSFET DUAL N-CH 60V PPAK 8SOIC 0 3,000:$1.16100
SI4933DY-T1-GE3 Vishay Siliconix MOSFET P-CH DUAL 12V 8-SOIC 0 2,500:$1.10700
SI4818DY-T1-GE3 Vishay Siliconix MOSFET N-CH DUAL 30V 8-SOIC 0 2,500:$1.10700
SI4816DY-T1-GE3 Vishay Siliconix MOSFET N-CH DUAL 30V 8-SOIC 0 2,500:$1.10700
SI4562DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 8-SOIC 0 2,500:$1.09755
SQJ844EP-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V PPAK 8SOIC 0 3,000:$1.08000
SIB911DK-T1-E3 • PDF参数
类别: 分离式半导体产品
FET 型: 2 个 P 沟道(双)
FET 特点: 标准
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 1.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 295 毫欧 @ 1.5A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 4nC @ 8V
输入电容 (Ciss) @ Vds: 115pF @ 10V
功率 - 最大: 1.1W
安装类型: 表面贴装
封装/外壳: PowerPAK? SC-75-6L 双
供应商设备封装: PowerPAK? SC-75-6L 双
包装: 剪切带 (CT)