分离式半导体产品 BSZ0901NS品牌、价格、PDF参数

BSZ0901NS • 品牌、价格
元器件型号 厂商 描述 数量 价格
BSZ0901NS Infineon Technologies MOSFET N-CH 30V S308 6,185 1:$2.46000
10:$2.10900
25:$1.89800
100:$1.72210
250:$1.54640
500:$1.33552
1,000:$1.12464
2,500:$1.01920
BSZ0901NS Infineon Technologies MOSFET N-CH 30V S308 6,185 1:$2.46000
10:$2.10900
25:$1.89800
100:$1.72210
250:$1.54640
500:$1.33552
1,000:$1.12464
2,500:$1.01920
IPD320N20N3 G Infineon Technologies MOSFET N-CH 200V 34A TO252-3 12,218 1:$3.09000
10:$2.65200
25:$2.38640
100:$2.16560
250:$1.94460
500:$1.67942
1,000:$1.41424
BSZ0901NS Infineon Technologies MOSFET N-CH 30V S308 5,000 5,000:$0.91377
10,000:$0.87863
25,000:$0.86105
50,000:$0.84348
IPD320N20N3 G Infineon Technologies MOSFET N-CH 200V 34A TO252-3 10,000 2,500:$1.19326
5,000:$1.14907
12,500:$1.10488
25,000:$1.08278
62,500:$1.06068
BSZ16DN25NS3 G Infineon Technologies MOSFET N-CH 250V 10.9A 8TSDSON 8,796 1:$2.43000
10:$2.08100
25:$1.87240
100:$1.69910
250:$1.52572
500:$1.31766
1,000:$1.10960
2,500:$1.00558
IPD110N12N3 G Infineon Technologies MOSFET N-CH 120V 75A TO252-3 2,500 2,500:$0.89680
5,000:$0.86359
12,500:$0.83038
25,000:$0.81377
62,500:$0.79716
BSZ0901NS • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 40A
开态Rds(最大)@ Id, Vgs @ 25° C: 2 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 2.2V @ 250µA
闸电荷(Qg) @ Vgs: 45nC @ 10V
输入电容 (Ciss) @ Vds: 2850pF @ 15V
功率 - 最大: 50W
安装类型: 表面贴装
封装/外壳: 8-TDFN 裸露焊盘
供应商设备封装: PG-TSDSON-8(3.3x3.3)
包装: Digi-Reel®