分离式半导体产品 BSZ16DN25NS3 G品牌、价格、PDF参数

BSZ16DN25NS3 G • 品牌、价格
元器件型号 厂商 描述 数量 价格
BSZ16DN25NS3 G Infineon Technologies MOSFET N-CH 250V 10.9A 8TSDSON 8,796 1:$2.43000
10:$2.08100
25:$1.87240
100:$1.69910
250:$1.52572
500:$1.31766
1,000:$1.10960
2,500:$1.00558
IPD110N12N3 G Infineon Technologies MOSFET N-CH 120V 75A TO252-3 3,486 1:$2.33000
10:$1.99300
25:$1.79360
100:$1.62750
250:$1.46148
500:$1.26218
1,000:$1.06288
IPD110N12N3 G Infineon Technologies MOSFET N-CH 120V 75A TO252-3 3,486 1:$2.33000
10:$1.99300
25:$1.79360
100:$1.62750
250:$1.46148
500:$1.26218
1,000:$1.06288
BSP125 L6433 Infineon Technologies MOSFET N-CH 600V 120MA SOT-223 11,060 1:$1.09000
10:$0.97800
25:$0.86320
100:$0.77680
250:$0.67608
500:$0.60418
1,000:$0.47471
BSP125 L6433 Infineon Technologies MOSFET N-CH 600V 120MA SOT-223 8,000 4,000:$0.40278
8,000:$0.38264
12,000:$0.36682
28,000:$0.35675
100,000:$0.34524
BSZ16DN25NS3 G • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 250V
电流 - 连续漏极(Id) @ 25° C: 10.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 165 毫欧 @ 5.5A,10V
Id 时的 Vgs(th)(最大): 4V @ 32µA
闸电荷(Qg) @ Vgs: 11.4nC @ 10V
输入电容 (Ciss) @ Vds: 920pF @ 100V
功率 - 最大: 62.5W
安装类型: 表面贴装
封装/外壳: 8-PowerTDFN
供应商设备封装: -
包装: Digi-Reel®