分离式半导体产品 IPD122N10N3 G品牌、价格、PDF参数

IPD122N10N3 G • 品牌、价格
元器件型号 厂商 描述 数量 价格
IPD122N10N3 G Infineon Technologies MOSFET N-CH 100V 59A TO252-3 5,000 1:$1.91000
10:$1.64100
25:$1.47680
100:$1.34020
250:$1.20340
500:$1.03930
1,000:$0.87520
IPD122N10N3 G Infineon Technologies MOSFET N-CH 100V 59A TO252-3 5,000 2,500:$0.73845
5,000:$0.71110
12,500:$0.68375
25,000:$0.67008
62,500:$0.65640
IPD034N06N3 G Infineon Technologies MOSFET N-CH 60V 100A TO252-3 2,500 2,500:$1.00184
5,000:$0.96473
12,500:$0.92762
25,000:$0.90907
62,500:$0.89052
BSZ018NE2LSI Infineon Technologies MOSFET N-CH 25V 22A TSDSON-8 9,638 1:$2.59000
10:$2.22000
25:$1.99760
100:$1.81280
250:$1.62780
500:$1.40582
1,000:$1.18384
2,500:$1.07286
IPD122N10N3 G • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 59A
开态Rds(最大)@ Id, Vgs @ 25° C: 12.2 毫欧 @ 46A,10V
Id 时的 Vgs(th)(最大): 3.5V @ 46µA
闸电荷(Qg) @ Vgs: 35nC @ 10V
输入电容 (Ciss) @ Vds: 2500pF @ 50V
功率 - 最大: 94W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: PG-TO252-3
包装: 剪切带 (CT)