分离式半导体产品 SI7119DN-T1-GE3品牌、价格、PDF参数

SI7119DN-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI7119DN-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 200V 1212-8 PPAK 4,170 1:$1.10000
25:$0.87000
100:$0.78300
250:$0.68152
500:$0.60900
1,000:$0.47850
SI7119DN-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 200V 1212-8 PPAK 4,170 1:$1.10000
25:$0.87000
100:$0.78300
250:$0.68152
500:$0.60900
1,000:$0.47850
SI7621DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 1212-8 PPAK 3,000 1:$0.73000
25:$0.56120
100:$0.49500
250:$0.42900
500:$0.36300
1,000:$0.28875
SI4156DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 5,184 1:$1.03000
25:$0.81000
100:$0.72900
250:$0.63452
500:$0.56700
1,000:$0.44550
SI4156DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 2,500 2,500:$0.37800
5,000:$0.35910
12,500:$0.34425
25,000:$0.33480
62,500:$0.32400
SI3475DV-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 200V 6-TSOP 5,347 1:$1.03000
25:$0.81000
100:$0.72900
250:$0.63452
500:$0.56700
1,000:$0.44550
SI3475DV-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 200V 6-TSOP 5,347 1:$1.03000
25:$0.81000
100:$0.72900
250:$0.63452
500:$0.56700
1,000:$0.44550
SI7119DN-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 200V
电流 - 连续漏极(Id) @ 25° C: 3.8A
开态Rds(最大)@ Id, Vgs @ 25° C: 1.05 欧姆 @ 1A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 25nC @ 10V
输入电容 (Ciss) @ Vds: 666pF @ 50V
功率 - 最大: 52W
安装类型: 表面贴装
封装/外壳: PowerPAK? 1212-8
供应商设备封装: PowerPAK? 1212-8
包装: Digi-Reel®