分离式半导体产品 SI7621DN-T1-GE3品牌、价格、PDF参数

SI7621DN-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI7621DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 1212-8 PPAK 3,000 1:$0.73000
25:$0.56120
100:$0.49500
250:$0.42900
500:$0.36300
1,000:$0.28875
SI4156DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 5,184 1:$1.03000
25:$0.81000
100:$0.72900
250:$0.63452
500:$0.56700
1,000:$0.44550
SI4156DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 2,500 2,500:$0.37800
5,000:$0.35910
12,500:$0.34425
25,000:$0.33480
62,500:$0.32400
SI3475DV-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 200V 6-TSOP 5,347 1:$1.03000
25:$0.81000
100:$0.72900
250:$0.63452
500:$0.56700
1,000:$0.44550
SI3475DV-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 200V 6-TSOP 5,347 1:$1.03000
25:$0.81000
100:$0.72900
250:$0.63452
500:$0.56700
1,000:$0.44550
SI7621DN-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 4A
开态Rds(最大)@ Id, Vgs @ 25° C: 90 毫欧 @ 3.9A,4.5V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 6.2nC @ 5V
输入电容 (Ciss) @ Vds: 300pF @ 10V
功率 - 最大: 12.5W
安装类型: 表面贴装
封装/外壳: PowerPAK? 1212-8
供应商设备封装: PowerPAK? 1212-8
包装: 剪切带 (CT)