分离式半导体产品 SI5913DC-T1-GE3品牌、价格、PDF参数

SI5913DC-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI5913DC-T1-GE3 Vishay Siliconix MOSFET P-CH 1206-8 0 3,000:$0.20925
6,000:$0.19575
15,000:$0.18225
30,000:$0.17213
75,000:$0.16875
150,000:$0.16200
SI3805DV-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V 6-TSOP 695 1:$0.74000
25:$0.51960
100:$0.44550
250:$0.38476
500:$0.33076
1,000:$0.25650
SI5402BDC-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 1206-8 0 3,000:$0.27200
SI3805DV-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V 6-TSOP 695 1:$0.74000
25:$0.51960
100:$0.44550
250:$0.38476
500:$0.33076
1,000:$0.25650
SI4620DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 350 1:$0.74000
25:$0.57120
100:$0.50400
250:$0.43680
500:$0.36960
1,000:$0.29400
SI5913DC-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 二极管(隔离式)
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 4A
开态Rds(最大)@ Id, Vgs @ 25° C: 84 毫欧 @ 3.7A,10V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 12nC @ 10V
输入电容 (Ciss) @ Vds: 330pF @ 10V
功率 - 最大: 3.1W
安装类型: 表面贴装
封装/外壳: 8-SMD,扁平引线
供应商设备封装: 1206-8 ChipFET?
包装: 带卷 (TR)