分离式半导体产品 SUD50P04-08-GE3品牌、价格、PDF参数

SUD50P04-08-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SUD50P04-08-GE3 Vishay Siliconix MOSFET P-CH D-S 40V DPAK 11,286 1:$1.64000
25:$1.29600
100:$1.16640
250:$1.01520
500:$0.90720
1,000:$0.71280
SUD50P04-08-GE3 Vishay Siliconix MOSFET P-CH D-S 40V DPAK 11,286 1:$1.64000
25:$1.29600
100:$1.16640
250:$1.01520
500:$0.90720
1,000:$0.71280
SUD50P04-08-GE3 Vishay Siliconix MOSFET P-CH D-S 40V DPAK 10,000 2,000:$0.60480
6,000:$0.57456
10,000:$0.55080
50,000:$0.51840
SI5486DU-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V PPAK CHIPFET 4,819 1:$1.29000
25:$1.02000
100:$0.91800
250:$0.79900
500:$0.71400
1,000:$0.56100
SI4154DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 40V 8-SOIC 7,787 1:$1.63000
25:$1.29000
100:$1.16100
250:$1.01052
500:$0.90300
1,000:$0.70950
SI4154DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 40V 8-SOIC 7,787 1:$1.63000
25:$1.29000
100:$1.16100
250:$1.01052
500:$0.90300
1,000:$0.70950
SI4154DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 40V 8-SOIC 7,500 2,500:$0.60200
5,000:$0.57190
12,500:$0.54825
25,000:$0.53320
62,500:$0.51600
SUD50P04-08-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 50A
开态Rds(最大)@ Id, Vgs @ 25° C: 8.1 毫欧 @ 22A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 159nC @ 10V
输入电容 (Ciss) @ Vds: 5380pF @ 20V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252,(D-Pak)
包装: Digi-Reel®