分离式半导体产品 IPW65R420CFD品牌、价格、PDF参数

IPW65R420CFD • 品牌、价格
元器件型号 厂商 描述 数量 价格
IPW65R420CFD Infineon Technologies MOSFET N-CH 650V 8.7A TO247 0 1:$4.09000
10:$3.65300
100:$2.99550
250:$2.70324
500:$2.42560
1,000:$2.04568
2,500:$1.94340
5,000:$1.86303
10,000:$1.81189
BSC109N10NS3 G Infineon Technologies MOSFET N-CH 100V 63A 8TDSON 0 1:$2.16000
10:$1.85000
25:$1.66440
100:$1.51040
250:$1.35632
500:$1.17136
1,000:$0.98640
2,500:$0.89392
BSC109N10NS3 G Infineon Technologies MOSFET N-CH 100V 63A 8TDSON 0 1:$2.16000
10:$1.85000
25:$1.66440
100:$1.51040
250:$1.35632
500:$1.17136
1,000:$0.98640
2,500:$0.89392
IPB65R190CFD Infineon Technologies MOSFET N-CH 650V 17.5A TO263 0 1,000:$2.60316
2,000:$2.47300
5,000:$2.37074
10,000:$2.30566
25,000:$2.23128
IPD90N04S4-02 Infineon Technologies MOSFET N-CH 40V 90A TO252-3-313 0 2,500:$0.80068
IPW65R420CFD • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 650V
电流 - 连续漏极(Id) @ 25° C: 8.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 420 毫欧 @ 3.4A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 340µA
闸电荷(Qg) @ Vgs: 32nC @ 10V
输入电容 (Ciss) @ Vds: 870pF @ 100V
功率 - 最大: 83.3W
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: PG-TO247-3
包装: 管件