分离式半导体产品 SI4622DY-T1-GE3品牌、价格、PDF参数

SI4622DY-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI4622DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 0 2,500:$0.94500
5,000:$0.91000
12,500:$0.87500
25,000:$0.85750
62,500:$0.84000
SI7222DN-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 40V 1212-8 PPAK 190 1:$2.00000
25:$1.53920
100:$1.39650
250:$1.25400
500:$1.08300
1,000:$0.91200
SI7222DN-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 40V 1212-8 PPAK 190 1:$2.00000
25:$1.53920
100:$1.39650
250:$1.25400
500:$1.08300
1,000:$0.91200
SI7222DN-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 40V 1212-8 PPAK 0 3,000:$0.76950
6,000:$0.74100
15,000:$0.71250
30,000:$0.69825
75,000:$0.68400
SI5908DC-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 1206-8 151 1:$1.52000
25:$1.20000
100:$1.08000
250:$0.94000
500:$0.84000
1,000:$0.66000
SI5908DC-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 1206-8 151 1:$1.52000
25:$1.20000
100:$1.08000
250:$0.94000
500:$0.84000
1,000:$0.66000
SI5908DC-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 1206-8 0 3,000:$0.56000
6,000:$0.53200
15,000:$0.51000
30,000:$0.49600
75,000:$0.48000
SI4622DY-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: 2 个 N 沟道(双)
FET 特点: 标准
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 8A
开态Rds(最大)@ Id, Vgs @ 25° C: 16 毫欧 @ 9.6A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 1mA
闸电荷(Qg) @ Vgs: 60nC @ 10V
输入电容 (Ciss) @ Vds: 2458pF @ 15V
功率 - 最大: 3.3W,3.1W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)