SI7900AEDN-T1-GE3 • 品牌、价格
| 元器件型号 |
厂商 |
描述 |
数量 |
价格 |
| SI7900AEDN-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 20V 1212-8 PPAK |
737 |
1:$1.29000
25:$1.02000
100:$0.91800
250:$0.79900
500:$0.71400
1,000:$0.56100
|
| SI7900AEDN-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 20V 1212-8 PPAK |
0 |
3,000:$0.47600
6,000:$0.45220
15,000:$0.43350
30,000:$0.42160
75,000:$0.40800
|
| SI5904DC-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 20V 1206-8 |
750 |
1:$1.22000
25:$0.96000
100:$0.86400
250:$0.75200
500:$0.67200
1,000:$0.52800
|
| SI5904DC-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 20V 1206-8 |
750 |
1:$1.22000
25:$0.96000
100:$0.86400
250:$0.75200
500:$0.67200
1,000:$0.52800
|
| SI5904DC-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 20V 1206-8 |
0 |
3,000:$0.44800
6,000:$0.42560
15,000:$0.40800
30,000:$0.39680
75,000:$0.38400
|
| SI4500BDY-T1-GE3 |
Vishay Siliconix |
MOSFET N/P-CH 8-SOIC |
423 |
1:$1.19000
25:$0.93600
100:$0.84240
250:$0.73320
500:$0.65520
1,000:$0.51480
|
| SI4500BDY-T1-GE3 |
Vishay Siliconix |
MOSFET N/P-CH 8-SOIC |
423 |
1:$1.19000
25:$0.93600
100:$0.84240
250:$0.73320
500:$0.65520
1,000:$0.51480
|
| SI4500BDY-T1-GE3 |
Vishay Siliconix |
MOSFET N/P-CH 8-SOIC |
0 |
2,500:$0.43680
5,000:$0.41496
12,500:$0.39780
25,000:$0.38688
62,500:$0.37440
|
| SI3586DV-T1-GE3 |
Vishay Siliconix |
MOSFET N/P-CH 20V 6-TSOP |
695 |
1:$1.10000
25:$0.87000
100:$0.78300
250:$0.68152
500:$0.60900
1,000:$0.47850
|
| SI3586DV-T1-GE3 |
Vishay Siliconix |
MOSFET N/P-CH 20V 6-TSOP |
695 |
1:$1.10000
25:$0.87000
100:$0.78300
250:$0.68152
500:$0.60900
1,000:$0.47850
|
SI7900AEDN-T1-GE3 • PDF参数
| 类别: |
分离式半导体产品
|
| FET 型: |
2 个 N 沟道（双）
|
| FET 特点: |
逻辑电平门
|
| 漏极至源极电压(Vdss): |
20V
|
| 电流 - 连续漏极(Id) @ 25° C: |
6A
|
| 开态Rds（最大）@ Id, Vgs @ 25° C: |
26 毫欧 @ 8.5A，4.5V
|
| Id 时的 Vgs(th)（最大）: |
900mV @ 250µA
|
| 闸电荷(Qg) @ Vgs: |
16nC @ 4.5V
|
| 输入电容 (Ciss) @ Vds: |
-
|
| 功率 - 最大: |
1.5W
|
| 安装类型: |
表面贴装
|
| 封装/外壳: |
PowerPAK? 1212-8
|
| 供应商设备封装: |
PowerPAK? 1212-8
|
| 包装: |
剪切带 (CT)
|