分离式半导体产品 SI4500BDY-T1-GE3品牌、价格、PDF参数

SI4500BDY-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI4500BDY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 8-SOIC 423 1:$1.19000
25:$0.93600
100:$0.84240
250:$0.73320
500:$0.65520
1,000:$0.51480
SI4500BDY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 8-SOIC 423 1:$1.19000
25:$0.93600
100:$0.84240
250:$0.73320
500:$0.65520
1,000:$0.51480
SI4500BDY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 8-SOIC 0 2,500:$0.43680
5,000:$0.41496
12,500:$0.39780
25,000:$0.38688
62,500:$0.37440
SI3586DV-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 6-TSOP 695 1:$1.10000
25:$0.87000
100:$0.78300
250:$0.68152
500:$0.60900
1,000:$0.47850
SI3586DV-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 6-TSOP 695 1:$1.10000
25:$0.87000
100:$0.78300
250:$0.68152
500:$0.60900
1,000:$0.47850
SI4500BDY-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 6.6A,3.8A
开态Rds(最大)@ Id, Vgs @ 25° C: 20 毫欧 @ 9.1A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 17nC @ 4.5V
输入电容 (Ciss) @ Vds: -
功率 - 最大: 1.3W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: Digi-Reel®