型号

分离式半导体产品 SIR878DP-T1-GE3品牌、价格、PDF参数

SIR878DP-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SIR878DP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 8-SOIC 3,549 1:$2.36000
25:$1.82240
100:$1.65380
250:$1.48500
500:$1.28250
1,000:$1.08000
SIR878DP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 8-SOIC 3,549 1:$2.36000
25:$1.82240
100:$1.65380
250:$1.48500
500:$1.28250
1,000:$1.08000
SI4190DY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 8-SOIC 3,793 1:$2.77000
25:$2.13320
100:$1.93550
250:$1.73800
500:$1.50100
1,000:$1.26400
SI4190DY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 8-SOIC 2,500 2,500:$1.06650
5,000:$1.02700
12,500:$0.98750
25,000:$0.96775
62,500:$0.94800
IRFR210TRLPBF Vishay Siliconix MOSFET N-CH 200V 2.6A DPAK 3,000 1:$1.06000
25:$0.81600
100:$0.72000
250:$0.62400
500:$0.52800
1,000:$0.42000
IRFR210TRLPBF Vishay Siliconix MOSFET N-CH 200V 2.6A DPAK 3,000 1:$1.06000
25:$0.81600
100:$0.72000
250:$0.62400
500:$0.52800
1,000:$0.42000
IRFR210TRLPBF Vishay Siliconix MOSFET N-CH 200V 2.6A DPAK 0 3,000:$0.34800
6,000:$0.32400
15,000:$0.31200
30,000:$0.30000
SIR878DP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 8-SOIC 3,000 3,000:$0.91125
6,000:$0.87750
15,000:$0.84375
30,000:$0.82688
75,000:$0.81000
SI4434DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 250V 8-SOIC 7,150 1:$2.51000
25:$1.93880
100:$1.75910
250:$1.57960
500:$1.36420
1,000:$1.14880
SI5476DU-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 60V PPAK CHIPFET 13,451 1:$1.44000
25:$1.14000
100:$1.02600
250:$0.89300
500:$0.79800
1,000:$0.62700
SI5476DU-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 60V PPAK CHIPFET 13,451 1:$1.44000
25:$1.14000
100:$1.02600
250:$0.89300
500:$0.79800
1,000:$0.62700
SIR878DP-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道，金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 40A
开态Rds（最大）@ Id, Vgs @ 25° C: 14 毫欧 @ 15A，10V
Id 时的 Vgs(th)（最大）: 2.8V @ 250µA
闸电荷(Qg) @ Vgs: 43nC @ 10V
输入电容 (Ciss) @ Vds: 1250pF @ 50V
功率 - 最大: 44.5W
安装类型: 表面贴装
封装/外壳: PowerPAK? SO-8
供应商设备封装: PowerPAK? SO-8
包装: Digi-Reel®
电脑版（www.mmic.net.cn）
买卖IC网 版权所有©2006-2020