分离式半导体产品 IRFR210TRLPBF品牌、价格、PDF参数

IRFR210TRLPBF • 品牌、价格
元器件型号 厂商 描述 数量 价格
IRFR210TRLPBF Vishay Siliconix MOSFET N-CH 200V 2.6A DPAK 3,000 1:$1.06000
25:$0.81600
100:$0.72000
250:$0.62400
500:$0.52800
1,000:$0.42000
IRFR210TRLPBF Vishay Siliconix MOSFET N-CH 200V 2.6A DPAK 3,000 1:$1.06000
25:$0.81600
100:$0.72000
250:$0.62400
500:$0.52800
1,000:$0.42000
IRFR210TRLPBF Vishay Siliconix MOSFET N-CH 200V 2.6A DPAK 0 3,000:$0.34800
6,000:$0.32400
15,000:$0.31200
30,000:$0.30000
SIR878DP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 8-SOIC 3,000 3,000:$0.91125
6,000:$0.87750
15,000:$0.84375
30,000:$0.82688
75,000:$0.81000
SI4434DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 250V 8-SOIC 7,150 1:$2.51000
25:$1.93880
100:$1.75910
250:$1.57960
500:$1.36420
1,000:$1.14880
SI5476DU-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 60V PPAK CHIPFET 13,451 1:$1.44000
25:$1.14000
100:$1.02600
250:$0.89300
500:$0.79800
1,000:$0.62700
SI5476DU-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 60V PPAK CHIPFET 13,451 1:$1.44000
25:$1.14000
100:$1.02600
250:$0.89300
500:$0.79800
1,000:$0.62700
IRFR210TRLPBF • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 200V
电流 - 连续漏极(Id) @ 25° C: 2.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 1.5 欧姆 @ 1.6A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 8.2nC @ 10V
输入电容 (Ciss) @ Vds: 140pF @ 25V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: Digi-Reel®