分离式半导体产品 SI4190DY-T1-GE3品牌、价格、PDF参数

SI4190DY-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI4190DY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 8-SOIC 3,793 1:$2.77000
25:$2.13320
100:$1.93550
250:$1.73800
500:$1.50100
1,000:$1.26400
SI4190DY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 8-SOIC 2,500 2,500:$1.06650
5,000:$1.02700
12,500:$0.98750
25,000:$0.96775
62,500:$0.94800
IRFR210TRLPBF Vishay Siliconix MOSFET N-CH 200V 2.6A DPAK 3,000 1:$1.06000
25:$0.81600
100:$0.72000
250:$0.62400
500:$0.52800
1,000:$0.42000
IRFR210TRLPBF Vishay Siliconix MOSFET N-CH 200V 2.6A DPAK 3,000 1:$1.06000
25:$0.81600
100:$0.72000
250:$0.62400
500:$0.52800
1,000:$0.42000
IRFR210TRLPBF Vishay Siliconix MOSFET N-CH 200V 2.6A DPAK 0 3,000:$0.34800
6,000:$0.32400
15,000:$0.31200
30,000:$0.30000
SIR878DP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 8-SOIC 3,000 3,000:$0.91125
6,000:$0.87750
15,000:$0.84375
30,000:$0.82688
75,000:$0.81000
SI4434DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 250V 8-SOIC 7,150 1:$2.51000
25:$1.93880
100:$1.75910
250:$1.57960
500:$1.36420
1,000:$1.14880
SI5476DU-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 60V PPAK CHIPFET 13,451 1:$1.44000
25:$1.14000
100:$1.02600
250:$0.89300
500:$0.79800
1,000:$0.62700
SI5476DU-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 60V PPAK CHIPFET 13,451 1:$1.44000
25:$1.14000
100:$1.02600
250:$0.89300
500:$0.79800
1,000:$0.62700
SI4190DY-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 20A
开态Rds(最大)@ Id, Vgs @ 25° C: 8.8 毫欧 @ 15A,10V
Id 时的 Vgs(th)(最大): 2.8V @ 250µA
闸电荷(Qg) @ Vgs: 58nC @ 10V
输入电容 (Ciss) @ Vds: 2000pF @ 50V
功率 - 最大: 7.8W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 剪切带 (CT)