分离式半导体产品 PSMN1R8-30BL,118品牌、价格、PDF参数

PSMN1R8-30BL,118 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PSMN1R8-30BL,118 NXP Semiconductors MOSFET N CH 30V 100A D2PAK 300 1:$2.33000
10:$2.10000
25:$1.88080
100:$1.69130
250:$1.50176
BUK7613-75B,118 NXP Semiconductors MOSFET N-CH 75V 75A D2PAK 618 1:$1.72000
10:$1.52100
25:$1.37280
100:$1.20130
250:$1.05352
PHT6N06T,135 NXP Semiconductors MOSFET N-CH 55V 5.5A SOT223 2,716 1:$0.75000
10:$0.65700
25:$0.58040
100:$0.50600
250:$0.44044
500:$0.37492
1,000:$0.30030
PSMN013-100BS,118 NXP Semiconductors MOSFET N CH 100V 68A D2PAK 0 800:$0.76410
1,600:$0.69045
2,400:$0.64442
5,600:$0.61220
20,000:$0.58918
40,000:$0.57077
80,000:$0.55236
PSMN1R8-30BL,118 NXP Semiconductors MOSFET N CH 30V 100A D2PAK 0 800:$1.15183
1,600:$1.05705
2,400:$0.98415
5,600:$0.94770
20,000:$0.91125
40,000:$0.89667
80,000:$0.87480
PSMN1R8-30BL,118 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 100A
开态Rds(最大)@ Id, Vgs @ 25° C: 1.8 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大): 2.15V @ 1mA
闸电荷(Qg) @ Vgs: 170nC @ 10V
输入电容 (Ciss) @ Vds: 10180pF @ 15V
功率 - 最大: 270W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 剪切带 (CT)