PSMN013-100BS,118 • 品牌、价格
| 元器件型号 |
厂商 |
描述 |
数量 |
价格 |
| PSMN013-100BS,118 |
NXP Semiconductors |
MOSFET N CH 100V 68A D2PAK |
0 |
800:$0.76410
1,600:$0.69045
2,400:$0.64442
5,600:$0.61220
20,000:$0.58918
40,000:$0.57077
80,000:$0.55236
|
| PSMN1R8-30BL,118 |
NXP Semiconductors |
MOSFET N CH 30V 100A D2PAK |
0 |
800:$1.15183
1,600:$1.05705
2,400:$0.98415
5,600:$0.94770
20,000:$0.91125
40,000:$0.89667
80,000:$0.87480
|
PSMN013-100BS,118 • PDF参数
| 类别: |
分离式半导体产品
|
| FET 型: |
MOSFET N 通道，金属氧化物
|
| FET 特点: |
逻辑电平门
|
| 漏极至源极电压(Vdss): |
100V
|
| 电流 - 连续漏极(Id) @ 25° C: |
68A
|
| 开态Rds（最大）@ Id, Vgs @ 25° C: |
13.9 毫欧 @ 15A，10V
|
| Id 时的 Vgs(th)（最大）: |
4V @ 1mA
|
| 闸电荷(Qg) @ Vgs: |
59nC @ 10V
|
| 输入电容 (Ciss) @ Vds: |
3195pF @ 50V
|
| 功率 - 最大: |
170W
|
| 安装类型: |
表面贴装
|
| 封装/外壳: |
TO-263-3，D²Pak（2 引线+接片），TO-263AB
|
| 供应商设备封装: |
D2PAK
|
| 包装: |
带卷 (TR)
|