分离式半导体产品 NP80N06MLG-S18-AY品牌、价格、PDF参数

NP80N06MLG-S18-AY • 品牌、价格
元器件型号 厂商 描述 数量 价格
NP80N06MLG-S18-AY Renesas Electronics America MOSFET N-CH 60V 80A TO-220 891 1:$2.32000
10:$2.09200
25:$1.86760
100:$1.68100
250:$1.49420
500:$1.30742
1,000:$1.08330
2,500:$1.00858
5,000:$0.97123
NP82N06MLG-S18-AY Renesas Electronics America MOSFET N-CH TO-220 830 1:$2.29000
10:$2.06900
25:$1.84760
100:$1.66280
250:$1.47800
500:$1.29326
1,000:$1.07155
2,500:$0.99765
5,000:$0.96070
NP82N04MDG-S18-AY Renesas Electronics America MOSFET N-CH TO-220 897 1:$2.29000
10:$2.06900
25:$1.84760
100:$1.66280
250:$1.47800
500:$1.29326
1,000:$1.07155
2,500:$0.99765
5,000:$0.96070
2SK3482-AZ Renesas Electronics America MOSFET N-CH 100V MP-3/TO-251 461 1:$1.69000
10:$1.52900
25:$1.36520
100:$1.22850
250:$1.09200
500:$0.95550
1,000:$0.79170
2,500:$0.73710
5,000:$0.70980
NP80N06MLG-S18-AY • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 80A
开态Rds(最大)@ Id, Vgs @ 25° C: 8.6 毫欧 @ 40A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 128nC @ 10V
输入电容 (Ciss) @ Vds: 6900pF @ 25V
功率 - 最大: 1.8W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220-3
包装: 管件