NP82N06MLG-S18-AY • 品牌、价格
| 元器件型号 |
厂商 |
描述 |
数量 |
价格 |
| NP82N06MLG-S18-AY |
Renesas Electronics America |
MOSFET N-CH TO-220 |
830 |
1:$2.29000
10:$2.06900
25:$1.84760
100:$1.66280
250:$1.47800
500:$1.29326
1,000:$1.07155
2,500:$0.99765
5,000:$0.96070
|
| NP82N04MDG-S18-AY |
Renesas Electronics America |
MOSFET N-CH TO-220 |
897 |
1:$2.29000
10:$2.06900
25:$1.84760
100:$1.66280
250:$1.47800
500:$1.29326
1,000:$1.07155
2,500:$0.99765
5,000:$0.96070
|
| 2SK3482-AZ |
Renesas Electronics America |
MOSFET N-CH 100V MP-3/TO-251 |
461 |
1:$1.69000
10:$1.52900
25:$1.36520
100:$1.22850
250:$1.09200
500:$0.95550
1,000:$0.79170
2,500:$0.73710
5,000:$0.70980
|
NP82N06MLG-S18-AY • PDF参数
| 类别: |
分离式半导体产品
|
| FET 型: |
MOSFET N 通道，金属氧化物
|
| FET 特点: |
逻辑电平门
|
| 漏极至源极电压(Vdss): |
60V
|
| 电流 - 连续漏极(Id) @ 25° C: |
82A
|
| 开态Rds（最大）@ Id, Vgs @ 25° C: |
7.4 毫欧 @ 41A，10V
|
| Id 时的 Vgs(th)（最大）: |
2.5V @ 250µA
|
| 闸电荷(Qg) @ Vgs: |
160nC @ 10V
|
| 输入电容 (Ciss) @ Vds: |
8550pF @ 25V
|
| 功率 - 最大: |
1.8W
|
| 安装类型: |
通孔
|
| 封装/外壳: |
TO-220-3
|
| 供应商设备封装: |
TO-220-3
|
| 包装: |
管件
|