分离式半导体产品 SI7403BDN-T1-GE3品牌、价格、PDF参数

SI7403BDN-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI7403BDN-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V 1212-8 PPAK 0 3,000:$0.35000
6,000:$0.33250
15,000:$0.31875
30,000:$0.31000
75,000:$0.30000
SIE848DF-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V POLARPAK 0 1:$2.98000
25:$2.29520
100:$2.08250
250:$1.87000
500:$1.61500
1,000:$1.36000
SI4056DY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V D-S 8SOIC 75 1:$1.01000
25:$0.78200
100:$0.69000
250:$0.59800
500:$0.50600
1,000:$0.40250
SI4056DY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V D-S 8SOIC 75 1:$1.01000
25:$0.78200
100:$0.69000
250:$0.59800
500:$0.50600
1,000:$0.40250
SI4056DY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V D-S 8SOIC 0 2,500:$0.33350
5,000:$0.31050
12,500:$0.29900
25,000:$0.28750
62,500:$0.28290
125,000:$0.27600
SIE848DF-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V POLARPAK 0 1:$2.98000
25:$2.29520
100:$2.08250
250:$1.87000
500:$1.61500
1,000:$1.36000
SQD50N06-07L-GE3 Vishay Siliconix MOSFET N-CH 60V 50A TO252 0 2,000:$1.72900
SI4886DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 9.5A 8-SOIC 0 2,500:$1.71570
SI7403BDN-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 8A
开态Rds(最大)@ Id, Vgs @ 25° C: 74 毫欧 @ 5.1A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 15nC @ 8V
输入电容 (Ciss) @ Vds: 430pF @ 10V
功率 - 最大: 9.6W
安装类型: 表面贴装
封装/外壳: PowerPAK? 1212-8
供应商设备封装: PowerPAK? 1212-8
包装: 带卷 (TR)