分离式半导体产品 SIE848DF-T1-GE3品牌、价格、PDF参数

SIE848DF-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SIE848DF-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V POLARPAK 0 1:$2.98000
25:$2.29520
100:$2.08250
250:$1.87000
500:$1.61500
1,000:$1.36000
SI4056DY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V D-S 8SOIC 75 1:$1.01000
25:$0.78200
100:$0.69000
250:$0.59800
500:$0.50600
1,000:$0.40250
SI4056DY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V D-S 8SOIC 75 1:$1.01000
25:$0.78200
100:$0.69000
250:$0.59800
500:$0.50600
1,000:$0.40250
SI4056DY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V D-S 8SOIC 0 2,500:$0.33350
5,000:$0.31050
12,500:$0.29900
25,000:$0.28750
62,500:$0.28290
125,000:$0.27600
SIE848DF-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V POLARPAK 0 1:$2.98000
25:$2.29520
100:$2.08250
250:$1.87000
500:$1.61500
1,000:$1.36000
SQD50N06-07L-GE3 Vishay Siliconix MOSFET N-CH 60V 50A TO252 0 2,000:$1.72900
SI4886DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 9.5A 8-SOIC 0 2,500:$1.71570
SIE848DF-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 60A
开态Rds(最大)@ Id, Vgs @ 25° C: 1.6 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 138nC @ 10V
输入电容 (Ciss) @ Vds: 6100pF @ 15V
功率 - 最大: 125W
安装类型: 表面贴装
封装/外壳: 10-PolarPAK?(L)
供应商设备封装: 10-PolarPAK?(L)
包装: Digi-Reel®