分离式半导体产品 IPI65R110CFD品牌、价格、PDF参数

IPI65R110CFD • 品牌、价格
元器件型号 厂商 描述 数量 价格
IPI65R110CFD Infineon Technologies MOSFET N-CH 650V 31.2A TO262 0 10,000:$3.86038
IPB530N15N3 G Infineon Technologies MOSFET N-CH 150V 21A TO263-3 2,000 1,000:$0.79489
2,000:$0.74007
5,000:$0.71266
10,000:$0.68525
25,000:$0.67155
50,000:$0.65784
IPI024N06N3 G Infineon Technologies MOSFET N-CH 60V 120A TO262-3 0 500:$2.38508
IPD048N06L3 G Infineon Technologies MOSFET N-CH 60V 90A TO252-3 0 2,500:$0.70322
IPD50R500CE Infineon Technologies MOSF 500V 7.6A PG-TO252 0 2,500:$0.70281
5,000:$0.67678
12,500:$0.65075
25,000:$0.63774
62,500:$0.62472
IPI65R110CFD • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 650V
电流 - 连续漏极(Id) @ 25° C: 31.2A
开态Rds(最大)@ Id, Vgs @ 25° C: 110 毫欧 @ 12.7A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 1.3mA
闸电荷(Qg) @ Vgs: 118nC @ 10V
输入电容 (Ciss) @ Vds: 3240pF @ 100V
功率 - 最大: 277.8W
安装类型: 通孔
封装/外壳: TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装: PG-TO262-3
包装: 管件