分离式半导体产品 SH8K4TB1品牌、价格、PDF参数

SH8K4TB1 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SH8K4TB1 Rohm Semiconductor MOSFET N-CH DUAL 30V 9A SOP8 0 2,500:$0.61740
5,000:$0.58653
10,000:$0.56228
25,000:$0.54684
SH8M5TB1 Rohm Semiconductor MOSFET N/P-CH 30V SOP8 2,500 2,500:$0.65240
5,000:$0.61978
10,000:$0.59415
25,000:$0.57784
SH8M5TB1 Rohm Semiconductor MOSFET N/P-CH 30V SOP8 4,878 1:$1.77000
25:$1.39800
100:$1.25820
250:$1.09512
500:$0.97860
1,000:$0.76890
SH8M4TB1 Rohm Semiconductor MOSFET N+P 30V 9A/7A 8-SOIC 12,500 2,500:$0.73000
5,000:$0.70300
10,000:$0.67600
SH8M4TB1 Rohm Semiconductor MOSFET N+P 30V 9A/7A 8-SOIC 1,724 1:$2.51000
25:$1.98000
100:$1.78200
250:$1.55100
500:$1.38600
1,000:$1.08900
SH8K4TB1 • PDF参数
类别: 分离式半导体产品
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 9A
开态Rds(最大)@ Id, Vgs @ 25° C: 17 毫欧 @ 9A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 1mA
闸电荷(Qg) @ Vgs: 21nC @ 5V
输入电容 (Ciss) @ Vds: 1190pF @ 10V
功率 - 最大: 2W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 带卷 (TR)