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分离式半导体产品 SH8M70TB1品牌、价格、PDF参数

SH8M70TB1 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SH8M70TB1 Rohm Semiconductor MOSFET N/P-CH 250V SOP8 4,760 1:$1.57000
25:$1.23920
100:$1.11510
250:$0.97056
500:$0.86730
1,000:$0.68145
SH8M70TB1 Rohm Semiconductor MOSFET N/P-CH 250V SOP8 4,760 1:$1.57000
25:$1.23920
100:$1.11510
250:$0.97056
500:$0.86730
1,000:$0.68145
SH8M24TB1 Rohm Semiconductor MOSFET N/P-CH 45V SOP8 2,500 2,500:$0.59080
5,000:$0.56126
10,000:$0.53805
25,000:$0.52328
SH8M24TB1 Rohm Semiconductor MOSFET N/P-CH 45V SOP8 3,083 1:$1.60000
25:$1.26600
100:$1.13940
250:$0.99172
500:$0.88620
1,000:$0.69630
SH8M24TB1 Rohm Semiconductor MOSFET N/P-CH 45V SOP8 3,083 1:$1.60000
25:$1.26600
100:$1.13940
250:$0.99172
500:$0.88620
1,000:$0.69630
SP8M51TB1 Rohm Semiconductor MOSFET N/P-CH 100V SOP8 3,820 1:$1.63000
25:$1.29000
100:$1.16100
250:$1.01052
500:$0.90300
1,000:$0.70950
SP8M51TB1 Rohm Semiconductor MOSFET N/P-CH 100V SOP8 3,820 1:$1.63000
25:$1.29000
100:$1.16100
250:$1.01052
500:$0.90300
1,000:$0.70950
SH8K32TB1 Rohm Semiconductor MOSFET N-CH DUAL 60V 4.5A SOP8 10,000 2,500:$0.60760
5,000:$0.57722
10,000:$0.55335
25,000:$0.53816
SH8K32TB1 Rohm Semiconductor MOSFET N-CH DUAL 60V 4.5A SOP8 11,571 1:$1.65000
25:$1.30200
100:$1.17180
250:$1.01992
500:$0.91140
1,000:$0.71610
SH8K32TB1 Rohm Semiconductor MOSFET N-CH DUAL 60V 4.5A SOP8 11,571 1:$1.65000
25:$1.30200
100:$1.17180
250:$1.01992
500:$0.91140
1,000:$0.71610
SH8K4TB1 Rohm Semiconductor MOSFET N-CH DUAL 30V 9A SOP8 0 2,500:$0.61740
5,000:$0.58653
10,000:$0.56228
25,000:$0.54684
SH8M5TB1 Rohm Semiconductor MOSFET N/P-CH 30V SOP8 2,500 2,500:$0.65240
5,000:$0.61978
10,000:$0.59415
25,000:$0.57784
SH8M5TB1 Rohm Semiconductor MOSFET N/P-CH 30V SOP8 4,878 1:$1.77000
25:$1.39800
100:$1.25820
250:$1.09512
500:$0.97860
1,000:$0.76890
SH8M4TB1 Rohm Semiconductor MOSFET N+P 30V 9A/7A 8-SOIC 12,500 2,500:$0.73000
5,000:$0.70300
10,000:$0.67600
SH8M4TB1 Rohm Semiconductor MOSFET N+P 30V 9A/7A 8-SOIC 1,724 1:$2.51000
25:$1.98000
100:$1.78200
250:$1.55100
500:$1.38600
1,000:$1.08900
SH8M70TB1 • PDF参数
类别: 分离式半导体产品
FET 型: N 和 P 沟道
FET 特点: 标准
漏极至源极电压(Vdss): 250V
电流 - 连续漏极(Id) @ 25° C: 3A，2.5A
开态Rds（最大）@ Id, Vgs @ 25° C: 1.63 欧姆 @ 1.5A，10V
Id 时的 Vgs(th)（最大）: 4V @ 1mA
闸电荷(Qg) @ Vgs: 5.2nC @ 10V
输入电容 (Ciss) @ Vds: 180pF @ 25V
功率 - 最大: 2W
安装类型: 表面贴装
封装/外壳: 8-SOIC（0.154"，3.90mm 宽）
供应商设备封装: 8-SOP
包装: 剪切带 (CT)
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