分离式半导体产品 SI3590DV-T1-GE3品牌、价格、PDF参数

SI3590DV-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI3590DV-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 6-TSOP 0 3,000:$0.33350
SI4947ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 65 1:$1.00000
25:$0.77200
100:$0.68100
250:$0.59020
500:$0.49940
1,000:$0.39725
SI4947ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 65 1:$1.00000
25:$0.77200
100:$0.68100
250:$0.59020
500:$0.49940
1,000:$0.39725
SI4947ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 0 2,500:$0.32915
5,000:$0.30645
12,500:$0.29510
25,000:$0.28375
62,500:$0.27921
125,000:$0.27240
SI4953ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 11 1:$0.95000
25:$0.73120
100:$0.64500
250:$0.55900
500:$0.47300
1,000:$0.37625
SI4953ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 11 1:$0.95000
25:$0.73120
100:$0.64500
250:$0.55900
500:$0.47300
1,000:$0.37625
SI4953ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 0 2,500:$0.31175
5,000:$0.29025
12,500:$0.27950
25,000:$0.26875
62,500:$0.26445
125,000:$0.25800
SI4532ADY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 8-SOIC 0 2,500:$0.29580
SI9936BDY-T1-GE3 Vishay Siliconix MOSFET DUAL N-CH 30V 4.5A 8-SOIC 0 2,500:$0.28710
SI3590DV-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 2.5A,1.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 77 毫欧 @ 3A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 4.5nC @ 4.5V
输入电容 (Ciss) @ Vds: -
功率 - 最大: 830mW
安装类型: 表面贴装
封装/外壳: 6-TSOP(0.065",1.65mm 宽)
供应商设备封装: 6-TSOP
包装: 带卷 (TR)