分离式半导体产品 IPD088N06N3 G品牌、价格、PDF参数

IPD088N06N3 G • 品牌、价格
元器件型号 厂商 描述 数量 价格
IPD088N06N3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3 4,750 1:$1.44000
10:$1.28500
25:$1.13360
100:$1.02030
250:$0.88808
500:$0.79360
1,000:$0.62354
IPD079N06L3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3 4,300 1:$1.44000
10:$1.28500
25:$1.13360
100:$1.02030
250:$0.88808
500:$0.79360
1,000:$0.62354
IPD079N06L3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3 4,300 1:$1.44000
10:$1.28500
25:$1.13360
100:$1.02030
250:$0.88808
500:$0.79360
1,000:$0.62354
BSO080P03NS3E G Infineon Technologies MOSFET P-CH 30V 12A 8DSO 4,970 1:$1.14000
10:$1.02300
25:$0.90320
100:$0.81270
250:$0.70736
500:$0.63210
1,000:$0.49665
BSO080P03NS3E G Infineon Technologies MOSFET P-CH 30V 12A 8DSO 4,970 1:$1.14000
10:$1.02300
25:$0.90320
100:$0.81270
250:$0.70736
500:$0.63210
1,000:$0.49665
BSO080P03NS3E G Infineon Technologies MOSFET P-CH 30V 12A 8DSO 0 2,500:$0.42140
5,000:$0.40033
12,500:$0.38378
25,000:$0.37324
62,500:$0.36120
IPD088N06N3 G • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 50A
开态Rds(最大)@ Id, Vgs @ 25° C: 8.8 毫欧 @ 50A,10V
Id 时的 Vgs(th)(最大): 4V @ 34µA
闸电荷(Qg) @ Vgs: 48nC @ 10V
输入电容 (Ciss) @ Vds: 3900pF @ 30V
功率 - 最大: 71W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: PG-TO252-3
包装: 剪切带 (CT)