分离式半导体产品 BSC032NE2LS品牌、价格、PDF参数

BSC032NE2LS • 品牌、价格
元器件型号 厂商 描述 数量 价格
BSC032NE2LS Infineon Technologies MOSFET N-CH 25V 22A TDSON-8 9,992 1:$1.53000
10:$1.37100
25:$1.20960
100:$1.08860
250:$0.94752
500:$0.84672
1,000:$0.66528
2,500:$0.62496
IPD088N06N3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3 4,750 1:$1.44000
10:$1.28500
25:$1.13360
100:$1.02030
250:$0.88808
500:$0.79360
1,000:$0.62354
IPD088N06N3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3 4,750 1:$1.44000
10:$1.28500
25:$1.13360
100:$1.02030
250:$0.88808
500:$0.79360
1,000:$0.62354
IPD079N06L3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3 4,300 1:$1.44000
10:$1.28500
25:$1.13360
100:$1.02030
250:$0.88808
500:$0.79360
1,000:$0.62354
IPD079N06L3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3 4,300 1:$1.44000
10:$1.28500
25:$1.13360
100:$1.02030
250:$0.88808
500:$0.79360
1,000:$0.62354
BSO080P03NS3E G Infineon Technologies MOSFET P-CH 30V 12A 8DSO 4,970 1:$1.14000
10:$1.02300
25:$0.90320
100:$0.81270
250:$0.70736
500:$0.63210
1,000:$0.49665
BSO080P03NS3E G Infineon Technologies MOSFET P-CH 30V 12A 8DSO 4,970 1:$1.14000
10:$1.02300
25:$0.90320
100:$0.81270
250:$0.70736
500:$0.63210
1,000:$0.49665
BSO080P03NS3E G Infineon Technologies MOSFET P-CH 30V 12A 8DSO 0 2,500:$0.42140
5,000:$0.40033
12,500:$0.38378
25,000:$0.37324
62,500:$0.36120
BSC032NE2LS • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 84A
开态Rds(最大)@ Id, Vgs @ 25° C: 3.2 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 16nC @ 10V
输入电容 (Ciss) @ Vds: 1200pF @ 12V
功率 - 最大: 37W
安装类型: 表面贴装
封装/外壳: 8-PowerTDFN
供应商设备封装: PG-TDSON-8
包装: Digi-Reel®