分离式半导体产品 BSZ240N12NS3 G品牌、价格、PDF参数

BSZ240N12NS3 G • 品牌、价格
元器件型号 厂商 描述 数量 价格
BSZ240N12NS3 G Infineon Technologies MOSFET N-CH 120V 37A TSDSON-8 9,995 1:$1.80000
10:$1.54100
25:$1.38680
100:$1.25830
250:$1.12992
500:$0.97584
1,000:$0.82176
2,500:$0.74472
BSZ42DN25NS3 G Infineon Technologies MOSFET N-CH 250V 5A TSDSON-8 9,980 1:$1.56000
10:$1.39800
25:$1.23360
100:$1.11020
250:$0.96632
500:$0.86352
1,000:$0.67848
2,500:$0.63736
IPD530N15N3 G Infineon Technologies MOSFET N-CH 150V 21A TO252-3 4,495 1:$1.79000
10:$1.60400
25:$1.41520
100:$1.27360
250:$1.10848
500:$0.99058
1,000:$0.77831
BSZ42DN25NS3 G Infineon Technologies MOSFET N-CH 250V 5A TSDSON-8 9,980 1:$1.56000
10:$1.39800
25:$1.23360
100:$1.11020
250:$0.96632
500:$0.86352
1,000:$0.67848
2,500:$0.63736
IPD530N15N3 G Infineon Technologies MOSFET N-CH 150V 21A TO252-3 2,500 2,500:$0.66038
5,000:$0.62736
12,500:$0.60142
25,000:$0.58491
62,500:$0.56604
BSZ240N12NS3 G • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 120V
电流 - 连续漏极(Id) @ 25° C: 37A
开态Rds(最大)@ Id, Vgs @ 25° C: 24 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 4V @ 35µA
闸电荷(Qg) @ Vgs: 27nC @ 10V
输入电容 (Ciss) @ Vds: 1900pF @ 60V
功率 - 最大: 66W
安装类型: 表面贴装
封装/外壳: 8-PowerTDFN
供应商设备封装: PG-TSDSON-8(3.3x3.3)
包装: 剪切带 (CT)