分离式半导体产品 DMN21D2UFB-7B品牌、价格、PDF参数

DMN21D2UFB-7B • 品牌、价格
元器件型号 厂商 描述 数量 价格
DMN21D2UFB-7B Diodes Inc MOSFET N CH 20V X1-DFN1006-3 19,525 1:$0.56000
10:$0.40600
25:$0.31560
100:$0.23890
250:$0.16888
500:$0.13518
1,000:$0.10369
2,500:$0.09012
5,000:$0.08094
DMN21D2UFB-7B Diodes Inc MOSFET N CH 20V X1-DFN1006-3 10,000 10,000:$0.07000
30,000:$0.06563
50,000:$0.05819
100,000:$0.05688
250,000:$0.05469
DMP21D0UFB4-7B Diodes Inc MOSF P CH 20V 770MA DFN1006H4-3 14,697 1:$0.56000
10:$0.40600
25:$0.31560
100:$0.23890
250:$0.16888
500:$0.13518
1,000:$0.10369
2,500:$0.09012
5,000:$0.08094
DMN21D2UFB-7B • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 760mA
开态Rds(最大)@ Id, Vgs @ 25° C: 990 毫欧 @ 100mA,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 0.93nC @ 10V
输入电容 (Ciss) @ Vds: 27.6pF @ 16V
功率 - 最大: 900mW
安装类型: 表面贴装
封装/外壳: 3-XFDFN
供应商设备封装: 3-X1DFN1006
包装: 剪切带 (CT)