分离式半导体产品 IPD65R600E6品牌、价格、PDF参数

IPD65R600E6 • 品牌、价格
元器件型号 厂商 描述 数量 价格
IPD65R600E6 Infineon Technologies MOSFET N-CH 650V 7.3A TO252-3 4,881 1:$2.22000
10:$1.90700
25:$1.71600
100:$1.55700
250:$1.39812
500:$1.20746
1,000:$1.01680
BSS308PE H6327 Infineon Technologies MOSFET P-CH 30V 2.0A SOT23 11,815 1:$0.60000
10:$0.42200
25:$0.34920
100:$0.28150
250:$0.20268
500:$0.16328
1,000:$0.12668
BSS308PE H6327 Infineon Technologies MOSFET P-CH 30V 2.0A SOT23 9,000 3,000:$0.10134
6,000:$0.09571
15,000:$0.08727
30,000:$0.08164
75,000:$0.07319
150,000:$0.07038
BSZ900N20NS3 G Infineon Technologies MOSFET N-CH 200V 15.2A 8TSDSON 9,672 1:$2.28000
10:$1.95800
25:$1.76240
100:$1.59910
250:$1.43596
500:$1.24014
1,000:$1.04432
2,500:$0.94642
IPD65R600E6 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 650V
电流 - 连续漏极(Id) @ 25° C: 7.3A
开态Rds(最大)@ Id, Vgs @ 25° C: 600 毫欧 @ 2.1A,10V
Id 时的 Vgs(th)(最大): 3.5V @ 210µA
闸电荷(Qg) @ Vgs: 23nC @ 10V
输入电容 (Ciss) @ Vds: 440pF @ 100V
功率 - 最大: 63W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: PG-TO252-3
包装: Digi-Reel®