分离式半导体产品 BSF134N10NJ3 G品牌、价格、PDF参数

BSF134N10NJ3 G • 品牌、价格
元器件型号 厂商 描述 数量 价格
BSF134N10NJ3 G Infineon Technologies MOSFET N-CH 100V 9A WDSON-2 9,880 1:$2.82000
10:$2.41300
25:$2.17200
100:$1.97080
250:$1.76968
500:$1.52836
1,000:$1.28704
2,500:$1.16638
BSC886N03LS G Infineon Technologies MOSFET N-CH 30V 65A TDSON-8 10,000 1:$1.07000
10:$0.95600
25:$0.84360
100:$0.75920
250:$0.66084
500:$0.59052
1,000:$0.46398
2,500:$0.43586
BSC886N03LS G Infineon Technologies MOSFET N-CH 30V 65A TDSON-8 10,000 1:$1.07000
10:$0.95600
25:$0.84360
100:$0.75920
250:$0.66084
500:$0.59052
1,000:$0.46398
2,500:$0.43586
BSF134N10NJ3 G • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 40A
开态Rds(最大)@ Id, Vgs @ 25° C: 13.4 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大): 3.5V @ 40µA
闸电荷(Qg) @ Vgs: 30nC @ 10V
输入电容 (Ciss) @ Vds: 2300pF @ 50V
功率 - 最大: 43W
安装类型: 表面贴装
封装/外壳: 3-WDSON
供应商设备封装: MG-WDSON-2,CanPAK M?
包装: 剪切带 (CT)