分离式半导体产品 IPB020NE7N3 G品牌、价格、PDF参数

IPB020NE7N3 G • 品牌、价格
元器件型号 厂商 描述 数量 价格
IPB020NE7N3 G Infineon Technologies MOSFET N-CH 75V 120A TO263-3 1,000 1,000:$2.87518
2,000:$2.73142
5,000:$2.61847
10,000:$2.54659
25,000:$2.46444
BSP125 L6433 Infineon Technologies MOSFET N-CH 600V 120MA SOT-223 11,060 1:$1.09000
10:$0.97800
25:$0.86320
100:$0.77680
250:$0.67608
500:$0.60418
1,000:$0.47471
IPD60R3K3C6 Infineon Technologies MOSFET N-CH 600V 1.7A TO252-3 4,213 1:$0.73000
10:$0.63300
25:$0.56680
100:$0.50010
250:$0.43344
500:$0.36674
1,000:$0.29173
IPD60R3K3C6 Infineon Technologies MOSFET N-CH 600V 1.7A TO252-3 2,500 2,500:$0.24172
5,000:$0.22505
12,500:$0.21671
25,000:$0.20838
62,500:$0.20504
125,000:$0.20004
BSS159N H6906 Infineon Technologies MOSFET N-CH 60V 230MA SOT23 3,000 3,000:$0.23505
6,000:$0.21884
15,000:$0.21073
30,000:$0.20263
75,000:$0.19938
150,000:$0.19452
BSP320S L6433 Infineon Technologies MOSFET N-CH 60V 2.9A SOT-223 7,975 1:$0.71000
10:$0.61000
25:$0.54600
100:$0.48180
250:$0.41756
500:$0.35332
1,000:$0.28105
BSP320S L6433 Infineon Technologies MOSFET N-CH 60V 2.9A SOT-223 4,000 4,000:$0.23287
8,000:$0.21681
12,000:$0.20878
28,000:$0.20075
100,000:$0.19272
IPB020NE7N3 G • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 75V
电流 - 连续漏极(Id) @ 25° C: 120A
开态Rds(最大)@ Id, Vgs @ 25° C: 2 毫欧 @ 100A,10V
Id 时的 Vgs(th)(最大): 3.8V @ 273µA
闸电荷(Qg) @ Vgs: 206nC @ 10V
输入电容 (Ciss) @ Vds: 14400pF @ 37.5V
功率 - 最大: 300W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: PG-TO263-2
包装: 带卷 (TR)