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分离式半导体产品 SI4487DY-T1-GE3品牌、价格、PDF参数

SI4487DY-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI4487DY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 4,529 1:$0.88000
25:$0.68000
100:$0.60000
250:$0.52000
500:$0.44000
1,000:$0.35000
SI4487DY-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 8-SOIC 2,500 2,500:$0.29000
5,000:$0.27000
12,500:$0.26000
25,000:$0.25000
62,500:$0.24600
125,000:$0.24000
SI9433BDY-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V 8-SOIC 2,542 1:$0.84000
25:$0.64960
100:$0.57300
250:$0.49660
500:$0.42020
1,000:$0.33425
SI9433BDY-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V 8-SOIC 2,542 1:$0.84000
25:$0.64960
100:$0.57300
250:$0.49660
500:$0.42020
1,000:$0.33425
SI9433BDY-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V 8-SOIC 2,500 2,500:$0.27695
5,000:$0.25785
12,500:$0.24830
25,000:$0.23875
62,500:$0.23493
125,000:$0.22920
SI3477DV-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 12V 6-TSOP 3,837 1:$0.84000
25:$0.64600
100:$0.57000
250:$0.49400
500:$0.41800
1,000:$0.33250
SI3477DV-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 12V 6-TSOP 3,000 3,000:$0.27550
6,000:$0.25650
15,000:$0.24700
30,000:$0.23750
75,000:$0.23370
150,000:$0.22800
SIA433EDJ-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V SC-70-6 5,927 1:$0.79000
25:$0.61200
100:$0.54000
250:$0.46800
500:$0.39600
1,000:$0.31500
SIA433EDJ-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V SC-70-6 3,000 3,000:$0.26100
6,000:$0.24300
15,000:$0.23400
30,000:$0.22500
75,000:$0.22140
150,000:$0.21600
SI5424DC-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 1206-8 4,538 1:$0.71000
25:$0.55080
100:$0.48600
250:$0.42120
500:$0.35640
1,000:$0.28350
SI5424DC-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 1206-8 4,538 1:$0.71000
25:$0.55080
100:$0.48600
250:$0.42120
500:$0.35640
1,000:$0.28350
SI5424DC-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 1206-8 3,000 3,000:$0.25467
SI1499DH-T1-GE3 Vishay Siliconix MOSFET P-CH 8V SC-70-6 8,442 1:$0.75000
25:$0.57800
100:$0.51000
250:$0.44200
500:$0.37400
1,000:$0.29750
SI1499DH-T1-GE3 Vishay Siliconix MOSFET P-CH 8V SC-70-6 8,442 1:$0.75000
25:$0.57800
100:$0.51000
250:$0.44200
500:$0.37400
1,000:$0.29750
SI4487DY-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET P 通道，金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 11.6A
开态Rds（最大）@ Id, Vgs @ 25° C: 20.5 毫欧 @ 10A，10V
Id 时的 Vgs(th)（最大）: 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 36nC @ 10V
输入电容 (Ciss) @ Vds: 1075pF @ 15V
功率 - 最大: 5W
安装类型: 表面贴装
封装/外壳: 8-SOIC（0.154"，3.90mm 宽）
供应商设备封装: 8-SOICN
包装: 剪切带 (CT)
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