分离式半导体产品 SI5424DC-T1-GE3品牌、价格、PDF参数

SI5424DC-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI5424DC-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 1206-8 4,538 1:$0.71000
25:$0.55080
100:$0.48600
250:$0.42120
500:$0.35640
1,000:$0.28350
SI5424DC-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 1206-8 4,538 1:$0.71000
25:$0.55080
100:$0.48600
250:$0.42120
500:$0.35640
1,000:$0.28350
SI5424DC-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 1206-8 3,000 3,000:$0.25467
SI1499DH-T1-GE3 Vishay Siliconix MOSFET P-CH 8V SC-70-6 8,442 1:$0.75000
25:$0.57800
100:$0.51000
250:$0.44200
500:$0.37400
1,000:$0.29750
SI1499DH-T1-GE3 Vishay Siliconix MOSFET P-CH 8V SC-70-6 8,442 1:$0.75000
25:$0.57800
100:$0.51000
250:$0.44200
500:$0.37400
1,000:$0.29750
SI5424DC-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 6A
开态Rds(最大)@ Id, Vgs @ 25° C: 24 毫欧 @ 4.8A,10V
Id 时的 Vgs(th)(最大): 2.3V @ 250µA
闸电荷(Qg) @ Vgs: 32nC @ 10V
输入电容 (Ciss) @ Vds: 950pF @ 15V
功率 - 最大: 6.25W
安装类型: 表面贴装
封装/外壳: 8-SMD,扁平引线
供应商设备封装: 1206-8 ChipFET?
包装: Digi-Reel®