分离式半导体产品 SI4464DY-T1-GE3品牌、价格、PDF参数

SI4464DY-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI4464DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 200V 8-SOIC 443 1:$1.14000
25:$0.89720
100:$0.80730
250:$0.70264
500:$0.62790
1,000:$0.49335
SI5402BDC-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 1206-8 255 1:$0.74000
25:$0.57120
100:$0.50400
250:$0.43680
500:$0.36960
1,000:$0.29400
SI4464DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 200V 8-SOIC 0 2,500:$0.47867
SI5913DC-T1-GE3 Vishay Siliconix MOSFET P-CH 1206-8 640 1:$0.74000
25:$0.51960
100:$0.44550
250:$0.38476
500:$0.33076
1,000:$0.25650
SI5913DC-T1-GE3 Vishay Siliconix MOSFET P-CH 1206-8 640 1:$0.74000
25:$0.51960
100:$0.44550
250:$0.38476
500:$0.33076
1,000:$0.25650
SUD45P03-09-GE3 Vishay Siliconix MOSFET P-CH D-S 30V DPAK 3,837 1:$1.45000
25:$1.14320
100:$1.02870
250:$0.89536
500:$0.80010
1,000:$0.62865
SUD45P03-09-GE3 Vishay Siliconix MOSFET P-CH D-S 30V DPAK 2,000 2,000:$0.53340
6,000:$0.50673
10,000:$0.48578
50,000:$0.45720
SI4464DY-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 200V
电流 - 连续漏极(Id) @ 25° C: 1.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 240 毫欧 @ 2.2A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 18nC @ 10V
输入电容 (Ciss) @ Vds: -
功率 - 最大: 1.5W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 剪切带 (CT)