分离式半导体产品 SIJ458DP-T1-GE3品牌、价格、PDF参数

SIJ458DP-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SIJ458DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 8-SOIC 498 1:$2.22000
25:$1.71440
100:$1.55580
250:$1.39700
500:$1.20650
1,000:$1.01600
SIJ458DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 8-SOIC 0 3,000:$0.85725
6,000:$0.82550
15,000:$0.79375
30,000:$0.77788
75,000:$0.76200
SI4465ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 13.7A 8SOIC 248 1:$2.21000
25:$1.70120
100:$1.54350
250:$1.38600
500:$1.19700
1,000:$1.00800
SIJ420DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 8-SOIC 500 1:$2.14000
25:$1.64720
100:$1.49450
250:$1.34200
500:$1.15900
1,000:$0.97600
SIJ420DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 8-SOIC 500 1:$2.14000
25:$1.64720
100:$1.49450
250:$1.34200
500:$1.15900
1,000:$0.97600
SI4896DY-T1-GE3 Vishay Siliconix MOSFET N-CH 80V 6.7A 8SOIC 504 1:$1.77000
25:$1.40120
100:$1.26090
250:$1.09744
500:$0.98070
1,000:$0.77055
SIE864DF-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V POLARPAK 646 1:$2.03000
25:$1.56880
100:$1.42350
250:$1.27820
500:$1.10390
1,000:$0.92960
SI4896DY-T1-GE3 Vishay Siliconix MOSFET N-CH 80V 6.7A 8SOIC 0 2,500:$0.65380
5,000:$0.62111
12,500:$0.59542
25,000:$0.57908
62,500:$0.56040
SIJ458DP-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 60A
开态Rds(最大)@ Id, Vgs @ 25° C: 2.2 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 122nC @ 10V
输入电容 (Ciss) @ Vds: 4810pF @ 15V
功率 - 最大: 69.4W
安装类型: 表面贴装
封装/外壳: PowerPAK? SO-8
供应商设备封装: PowerPAK? SO-8
包装: 剪切带 (CT)