分离式半导体产品 SI4465ADY-T1-GE3品牌、价格、PDF参数

SI4465ADY-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI4465ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 13.7A 8SOIC 248 1:$2.21000
25:$1.70120
100:$1.54350
250:$1.38600
500:$1.19700
1,000:$1.00800
SIJ420DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 8-SOIC 500 1:$2.14000
25:$1.64720
100:$1.49450
250:$1.34200
500:$1.15900
1,000:$0.97600
SIJ420DP-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 8-SOIC 500 1:$2.14000
25:$1.64720
100:$1.49450
250:$1.34200
500:$1.15900
1,000:$0.97600
SI4896DY-T1-GE3 Vishay Siliconix MOSFET N-CH 80V 6.7A 8SOIC 504 1:$1.77000
25:$1.40120
100:$1.26090
250:$1.09744
500:$0.98070
1,000:$0.77055
SIE864DF-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V POLARPAK 646 1:$2.03000
25:$1.56880
100:$1.42350
250:$1.27820
500:$1.10390
1,000:$0.92960
SI4896DY-T1-GE3 Vishay Siliconix MOSFET N-CH 80V 6.7A 8SOIC 0 2,500:$0.65380
5,000:$0.62111
12,500:$0.59542
25,000:$0.57908
62,500:$0.56040
SI4465ADY-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 8V
电流 - 连续漏极(Id) @ 25° C: -
开态Rds(最大)@ Id, Vgs @ 25° C: 9 毫欧 @ 14A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 85nc @ 4.5V
输入电容 (Ciss) @ Vds: -
功率 - 最大: 3W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: Digi-Reel®