分离式半导体产品 PSMN3R0-60BS,118品牌、价格、PDF参数

PSMN3R0-60BS,118 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PSMN3R0-60BS,118 NXP Semiconductors MOSFET N-CH 60V 100A D2PAK 297 1:$2.91000
10:$2.62900
25:$2.35560
100:$2.11820
250:$1.88080
BUK7619-100B,118 NXP Semiconductors MOSFET N-CH TRENCH 100V D2PAK 737 1:$1.95000
10:$1.76000
25:$1.57680
100:$1.41780
250:$1.25888
PSMN3R4-30BL,118 NXP Semiconductors MOSFET N CH 30V 100A D2PAK 0 800:$0.67164
1,600:$0.60690
2,400:$0.56644
5,600:$0.53812
20,000:$0.51789
40,000:$0.50170
80,000:$0.48552
PSMN1R1-25YLC,115 NXP Semiconductors MOSFET N-CH 25V 100A LFPAK 953 1:$1.46000
10:$1.29000
25:$1.16480
100:$1.01910
250:$0.89372
500:$0.79262
PSMN1R1-25YLC,115 NXP Semiconductors MOSFET N-CH 25V 100A LFPAK 953 1:$1.46000
10:$1.29000
25:$1.16480
100:$1.01910
250:$0.89372
500:$0.79262
PSMN3R0-60BS,118 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 100A
开态Rds(最大)@ Id, Vgs @ 25° C: 3.2 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大): 4V @ 1mA
闸电荷(Qg) @ Vgs: 130nC @ 10V
输入电容 (Ciss) @ Vds: 8079pF @ 30V
功率 - 最大: 306W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: Digi-Reel®