分离式半导体产品 PSMN3R0-60BS,118品牌、价格、PDF参数

PSMN3R0-60BS,118 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PSMN3R0-60BS,118 NXP Semiconductors MOSFET N-CH 60V 100A D2PAK 297 1:$2.91000
10:$2.62900
25:$2.35560
100:$2.11820
250:$1.88080
PSMN3R0-60BS,118 NXP Semiconductors MOSFET N-CH 60V 100A D2PAK 0 800:$1.44254
1,600:$1.32385
2,400:$1.23255
5,600:$1.18690
20,000:$1.14125
40,000:$1.12299
80,000:$1.09560
PSMN015-110P,127 NXP Semiconductors MOSFET N-CH 110V 75A TO220AB 958 1:$1.58000
10:$1.40100
25:$1.26560
100:$1.10740
250:$0.97180
500:$0.85880
PSMN3R0-60PS,127 NXP Semiconductors MOSFET N-CH 60V 100A TO220 441 1:$2.72000
10:$2.45700
25:$2.19360
100:$1.97440
250:$1.75500
500:$1.53562
1,000:$1.27238
2,500:$1.18462
5,000:$1.14075
PSMN4R3-80PS,127 NXP Semiconductors MOSFET N-CH 80V 120A TO220 443 1:$2.83000
10:$2.55900
25:$2.28520
100:$2.05670
250:$1.82820
500:$1.59968
1,000:$1.32545
2,500:$1.23404
5,000:$1.18833
PSMN2R2-40BS,118 NXP Semiconductors MOSFET N-CH 40V 100A D2PAK 300 1:$2.81000
10:$2.53400
25:$2.27000
100:$2.04110
250:$1.81240
PSMN2R2-40BS,118 NXP Semiconductors MOSFET N-CH 40V 100A D2PAK 300 1:$2.81000
10:$2.53400
25:$2.27000
100:$2.04110
250:$1.81240
PSMN3R0-60BS,118 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 100A
开态Rds(最大)@ Id, Vgs @ 25° C: 3.2 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大): 4V @ 1mA
闸电荷(Qg) @ Vgs: 130nC @ 10V
输入电容 (Ciss) @ Vds: 8079pF @ 30V
功率 - 最大: 306W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 剪切带 (CT)