分离式半导体产品 PSMN015-110P,127品牌、价格、PDF参数

PSMN015-110P,127 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PSMN015-110P,127 NXP Semiconductors MOSFET N-CH 110V 75A TO220AB 958 1:$1.58000
10:$1.40100
25:$1.26560
100:$1.10740
250:$0.97180
500:$0.85880
PSMN3R0-60PS,127 NXP Semiconductors MOSFET N-CH 60V 100A TO220 441 1:$2.72000
10:$2.45700
25:$2.19360
100:$1.97440
250:$1.75500
500:$1.53562
1,000:$1.27238
2,500:$1.18462
5,000:$1.14075
PSMN4R3-80PS,127 NXP Semiconductors MOSFET N-CH 80V 120A TO220 443 1:$2.83000
10:$2.55900
25:$2.28520
100:$2.05670
250:$1.82820
500:$1.59968
1,000:$1.32545
2,500:$1.23404
5,000:$1.18833
PSMN2R2-40BS,118 NXP Semiconductors MOSFET N-CH 40V 100A D2PAK 300 1:$2.81000
10:$2.53400
25:$2.27000
100:$2.04110
250:$1.81240
PSMN2R2-40BS,118 NXP Semiconductors MOSFET N-CH 40V 100A D2PAK 300 1:$2.81000
10:$2.53400
25:$2.27000
100:$2.04110
250:$1.81240
PSMN015-110P,127 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 110V
电流 - 连续漏极(Id) @ 25° C: 75A
开态Rds(最大)@ Id, Vgs @ 25° C: 15 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大): 4V @ 1mA
闸电荷(Qg) @ Vgs: 90nC @ 10V
输入电容 (Ciss) @ Vds: 4900pF @ 25V
功率 - 最大: 300W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件