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分离式半导体产品 SI5471DC-T1-GE3品牌、价格、PDF参数

SI5471DC-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI5471DC-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V 1206-8 17,775 1:$0.84000
25:$0.64600
100:$0.57000
250:$0.49400
500:$0.41800
1,000:$0.33250
SI7104DN-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 12V PPAK 1212-8 0 3,000:$0.99900
SI5471DC-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V 1206-8 15,000 3,000:$0.27550
6,000:$0.25650
15,000:$0.24700
30,000:$0.23750
75,000:$0.23370
150,000:$0.22800
SI4892DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 0 2,500:$0.99900
SI1413DH-T1-GE3 Vishay Siliconix MOSFET P-CH 20V SC-70-6 0 3,000:$0.26245
SI5429DU-T1-GE3 Vishay Siliconix MOSF P CH 30V 12A PWR PK 95 1:$0.79000
25:$0.61200
100:$0.54000
250:$0.46800
500:$0.39600
1,000:$0.31500
SI5429DU-T1-GE3 Vishay Siliconix MOSF P CH 30V 12A PWR PK 95 1:$0.79000
25:$0.61200
100:$0.54000
250:$0.46800
500:$0.39600
1,000:$0.31500
SI5429DU-T1-GE3 Vishay Siliconix MOSF P CH 30V 12A PWR PK 0 3,000:$0.26100
6,000:$0.24300
15,000:$0.23400
30,000:$0.22500
75,000:$0.22140
150,000:$0.21600
SI8416DB-T1-GE3 Vishay Siliconix MOSFET N-CH 8V 16A MICRO 0 1:$0.79000
25:$0.61200
100:$0.54000
250:$0.46800
500:$0.39600
1,000:$0.31500
SI8416DB-T1-GE3 Vishay Siliconix MOSFET N-CH 8V 16A MICRO 0 1:$0.79000
25:$0.61200
100:$0.54000
250:$0.46800
500:$0.39600
1,000:$0.31500
IRF740ASTRRPBF Vishay Siliconix MOSFET N-CH 400V 10A D2PAK 0 800:$0.97965
SI4864DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V 8-SOIC 0 2,500:$2.02160
SI4412ADY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 0 2,500:$0.26100
SI4456DY-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 33A 8-SOIC 0 2,500:$0.96930
SI4410BDY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 0 2,500:$0.26100
SIRA14DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V D-S SO-8 0 1:$0.77000
25:$0.59680
100:$0.52650
250:$0.45632
500:$0.38610
1,000:$0.30713
SIRA14DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V D-S SO-8 0 1:$0.77000
25:$0.59680
100:$0.52650
250:$0.45632
500:$0.38610
1,000:$0.30713
SIRA14DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V D-S SO-8 0 3,000:$0.25448
6,000:$0.23693
15,000:$0.22815
30,000:$0.21938
75,000:$0.21587
150,000:$0.21060
SI5471DC-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET P 通道，金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 6A
开态Rds（最大）@ Id, Vgs @ 25° C: 20 毫欧 @ 9.1A，4.5V
Id 时的 Vgs(th)（最大）: 1.1V @ 250µA
闸电荷(Qg) @ Vgs: 96nC @ 10V
输入电容 (Ciss) @ Vds: 2945pF @ 10V
功率 - 最大: 6.3W
安装类型: 表面贴装
封装/外壳: 8-SMD，扁平引线
供应商设备封装: 1206-8 ChipFET?
包装: 剪切带 (CT)
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