分离式半导体产品 IRF740ASTRRPBF品牌、价格、PDF参数

IRF740ASTRRPBF • 品牌、价格
元器件型号 厂商 描述 数量 价格
IRF740ASTRRPBF Vishay Siliconix MOSFET N-CH 400V 10A D2PAK 0 800:$0.97965
SI4864DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V 8-SOIC 0 2,500:$2.02160
SI4412ADY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 0 2,500:$0.26100
SI4456DY-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 33A 8-SOIC 0 2,500:$0.96930
SI4410BDY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 0 2,500:$0.26100
SIRA14DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V D-S SO-8 0 1:$0.77000
25:$0.59680
100:$0.52650
250:$0.45632
500:$0.38610
1,000:$0.30713
SIRA14DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V D-S SO-8 0 1:$0.77000
25:$0.59680
100:$0.52650
250:$0.45632
500:$0.38610
1,000:$0.30713
SIRA14DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V D-S SO-8 0 3,000:$0.25448
6,000:$0.23693
15,000:$0.22815
30,000:$0.21938
75,000:$0.21587
150,000:$0.21060
IRF740ASTRRPBF • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 400V
电流 - 连续漏极(Id) @ 25° C: 10A
开态Rds(最大)@ Id, Vgs @ 25° C: 550 毫欧 @ 6A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 36nC @ 10V
输入电容 (Ciss) @ Vds: 1030pF @ 25V
功率 - 最大: 3.1W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 带卷 (TR)