分离式半导体产品 SI1413DH-T1-GE3品牌、价格、PDF参数

SI1413DH-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI1413DH-T1-GE3 Vishay Siliconix MOSFET P-CH 20V SC-70-6 0 3,000:$0.26245
SI5429DU-T1-GE3 Vishay Siliconix MOSF P CH 30V 12A PWR PK 95 1:$0.79000
25:$0.61200
100:$0.54000
250:$0.46800
500:$0.39600
1,000:$0.31500
SI5429DU-T1-GE3 Vishay Siliconix MOSF P CH 30V 12A PWR PK 95 1:$0.79000
25:$0.61200
100:$0.54000
250:$0.46800
500:$0.39600
1,000:$0.31500
SI5429DU-T1-GE3 Vishay Siliconix MOSF P CH 30V 12A PWR PK 0 3,000:$0.26100
6,000:$0.24300
15,000:$0.23400
30,000:$0.22500
75,000:$0.22140
150,000:$0.21600
SI8416DB-T1-GE3 Vishay Siliconix MOSFET N-CH 8V 16A MICRO 0 1:$0.79000
25:$0.61200
100:$0.54000
250:$0.46800
500:$0.39600
1,000:$0.31500
SI8416DB-T1-GE3 Vishay Siliconix MOSFET N-CH 8V 16A MICRO 0 1:$0.79000
25:$0.61200
100:$0.54000
250:$0.46800
500:$0.39600
1,000:$0.31500
IRF740ASTRRPBF Vishay Siliconix MOSFET N-CH 400V 10A D2PAK 0 800:$0.97965
SI4864DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V 8-SOIC 0 2,500:$2.02160
SI4412ADY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 0 2,500:$0.26100
SI4456DY-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 33A 8-SOIC 0 2,500:$0.96930
SI4410BDY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 0 2,500:$0.26100
SIRA14DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V D-S SO-8 0 1:$0.77000
25:$0.59680
100:$0.52650
250:$0.45632
500:$0.38610
1,000:$0.30713
SIRA14DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V D-S SO-8 0 1:$0.77000
25:$0.59680
100:$0.52650
250:$0.45632
500:$0.38610
1,000:$0.30713
SIRA14DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V D-S SO-8 0 3,000:$0.25448
6,000:$0.23693
15,000:$0.22815
30,000:$0.21938
75,000:$0.21587
150,000:$0.21060
SI1413DH-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 2.3A
开态Rds(最大)@ Id, Vgs @ 25° C: 115 毫欧 @ 2.9A,4.5V
Id 时的 Vgs(th)(最大): 800mV @ 100µA
闸电荷(Qg) @ Vgs: 8.5nC @ 4.5V
输入电容 (Ciss) @ Vds: -
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: SC-70-6
包装: 带卷 (TR)