分离式半导体产品 SI1539DL-T1-GE3品牌、价格、PDF参数

SI1539DL-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI1539DL-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V SC70-6 5,850 1:$0.63000
25:$0.44280
100:$0.37950
250:$0.32776
500:$0.28176
1,000:$0.21850
SI5513CDC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 1206-8 0 3,000:$0.20925
6,000:$0.19575
15,000:$0.18225
30,000:$0.17213
75,000:$0.16875
150,000:$0.16200
SI5513CDC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 1206-8 2,237 1:$0.74000
25:$0.51960
100:$0.44550
250:$0.38476
500:$0.33076
1,000:$0.25650
SIA533EDJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 12V 4.5A SC70-6 3,000 3,000:$0.20925
6,000:$0.19575
15,000:$0.18225
30,000:$0.17213
75,000:$0.16875
150,000:$0.16200
SIS902DN-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 75V 1212-8 PPAK 6,745 1:$0.90000
25:$0.69720
100:$0.61500
250:$0.53300
500:$0.45100
1,000:$0.35875
SI7232DN-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V 1212-8 PPAK 3,000 3,000:$0.33350
6,000:$0.31050
15,000:$0.29900
30,000:$0.28750
75,000:$0.28290
150,000:$0.27600
SI4228DY-T1-GE3 Vishay Siliconix MOSFET N-CH 25V 8-SOIC 2,500 2,500:$0.35000
5,000:$0.33250
12,500:$0.31875
25,000:$0.31000
62,500:$0.30000
SI1539DL-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 540mA,420mA
开态Rds(最大)@ Id, Vgs @ 25° C: 480 毫欧 @ 590mA,10V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 1.4nC @ 10V
输入电容 (Ciss) @ Vds: -
功率 - 最大: 270mW
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: SC-70-6
包装: Digi-Reel®