分离式半导体产品 DMS3017SSD-13品牌、价格、PDF参数

DMS3017SSD-13 • 品牌、价格
元器件型号 厂商 描述 数量 价格
DMS3017SSD-13 Diodes Inc MOSFET 2N-CH 30V 8A/6A SO8 4,940 1:$0.64000
10:$0.56000
25:$0.49440
100:$0.43090
250:$0.37512
500:$0.31930
1,000:$0.25575
DMS3017SSD-13 Diodes Inc MOSFET 2N-CH 30V 8A/6A SO8 4,940 1:$0.64000
10:$0.56000
25:$0.49440
100:$0.43090
250:$0.37512
500:$0.31930
1,000:$0.25575
DMG4822SSD-13 Diodes Inc MOSFET DL N-CH 30V 10A SO-8 7,500 2,500:$0.23562
5,000:$0.21938
12,500:$0.21125
25,000:$0.20313
62,500:$0.19988
125,000:$0.19500
DMG4822SSD-13 Diodes Inc MOSFET DL N-CH 30V 10A SO-8 9,300 1:$0.67000
10:$0.58700
25:$0.51840
100:$0.45180
250:$0.39324
500:$0.33476
1,000:$0.26813
DMG4822SSD-13 Diodes Inc MOSFET DL N-CH 30V 10A SO-8 9,300 1:$0.67000
10:$0.58700
25:$0.51840
100:$0.45180
250:$0.39324
500:$0.33476
1,000:$0.26813
DMS3017SSD-13 • PDF参数
类别: 分离式半导体产品
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 8A,6A
开态Rds(最大)@ Id, Vgs @ 25° C: 12 毫欧 @ 9.5A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 30.6nC @ 10V
输入电容 (Ciss) @ Vds: 1276pF @ 15V
功率 - 最大: 1.19W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 剪切带 (CT)