分离式半导体产品 DMG6898LSD-13品牌、价格、PDF参数

DMG6898LSD-13 • 品牌、价格
元器件型号 厂商 描述 数量 价格
DMG6898LSD-13 Diodes Inc MOSFET 2N-CH 20V 9.5A SO8 14,745 1:$0.74000
10:$0.65000
25:$0.57440
100:$0.50040
250:$0.43560
500:$0.37080
1,000:$0.29700
DMC4050SSD-13 Diodes Inc MOSFET N/P-CH 40V 4.2A SO8 12,500 2,500:$0.27260
5,000:$0.25380
12,500:$0.24440
25,000:$0.23500
62,500:$0.23124
125,000:$0.22560
DMC4050SSD-13 Diodes Inc MOSFET N/P-CH 40V 4.2A SO8 14,202 1:$0.77000
10:$0.67900
25:$0.59960
100:$0.52260
250:$0.45496
500:$0.38728
1,000:$0.31020
DMC4050SSD-13 Diodes Inc MOSFET N/P-CH 40V 4.2A SO8 14,202 1:$0.77000
10:$0.67900
25:$0.59960
100:$0.52260
250:$0.45496
500:$0.38728
1,000:$0.31020
DMG4511SK4-13 Diodes Inc MOSFET N/P-CH 35V TO252-4L 7,500 5,000:$0.29700
10,000:$0.28600
25,000:$0.27500
50,000:$0.27060
125,000:$0.26400
DMG4511SK4-13 Diodes Inc MOSFET N/P-CH 35V TO252-4L 9,970 1:$0.91000
10:$0.79400
25:$0.70200
100:$0.61160
250:$0.53240
500:$0.45320
1,000:$0.36300
2,500:$0.32780
DMG4511SK4-13 Diodes Inc MOSFET N/P-CH 35V TO252-4L 9,970 1:$0.91000
10:$0.79400
25:$0.70200
100:$0.61160
250:$0.53240
500:$0.45320
1,000:$0.36300
2,500:$0.32780
DMG6898LSD-13 • PDF参数
类别: 分离式半导体产品
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 9.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 16 毫欧 @ 9.4A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 26nC @ 10V
输入电容 (Ciss) @ Vds: 1149pF @ 10V
功率 - 最大: 1.28W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: Digi-Reel®