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分离式半导体产品 SI4564DY-T1-GE3品牌、价格、PDF参数

SI4564DY-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI4564DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 10A/9.2A 8SOIC 4,746 1:$1.52000
25:$1.20000
100:$1.08000
250:$0.94000
500:$0.84000
1,000:$0.66000
SI4564DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 10A/9.2A 8SOIC 4,746 1:$1.52000
25:$1.20000
100:$1.08000
250:$0.94000
500:$0.84000
1,000:$0.66000
SI1551DL-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V SC70-6 2,977 1:$0.66000
25:$0.46200
100:$0.39600
250:$0.34200
500:$0.29400
1,000:$0.22800
SI1551DL-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V SC70-6 2,977 1:$0.66000
25:$0.46200
100:$0.39600
250:$0.34200
500:$0.29400
1,000:$0.22800
SI3932DV-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6-TSOP 0 3,000:$0.21750
6,000:$0.20250
15,000:$0.19500
30,000:$0.18750
75,000:$0.18450
150,000:$0.18000
SI4511DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH D-S 20V 8-SOIC 3,718 1:$1.82000
25:$1.44000
100:$1.29600
250:$1.12800
500:$1.00800
1,000:$0.79200
SI4511DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH D-S 20V 8-SOIC 3,718 1:$1.82000
25:$1.44000
100:$1.29600
250:$1.12800
500:$1.00800
1,000:$0.79200
SI7913DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 1212-8 PPAK 12,000 3,000:$0.71550
6,000:$0.68900
15,000:$0.66250
30,000:$0.64925
75,000:$0.63600
SI4204DY-T1-GE3 Vishay Siliconix MOSFET N-CH 8-SOIC 2,500 2,500:$0.82350
5,000:$0.79300
12,500:$0.76250
25,000:$0.74725
62,500:$0.73200
SI4204DY-T1-GE3 Vishay Siliconix MOSFET N-CH 8-SOIC 3,070 1:$2.14000
25:$1.64720
100:$1.49450
250:$1.34200
500:$1.15900
1,000:$0.97600
SI4204DY-T1-GE3 Vishay Siliconix MOSFET N-CH 8-SOIC 3,070 1:$2.14000
25:$1.64720
100:$1.49450
250:$1.34200
500:$1.15900
1,000:$0.97600
SI4904DY-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 8-SOIC 2,500 2,500:$0.97200
5,000:$0.93600
12,500:$0.90000
25,000:$0.88200
62,500:$0.86400
SI4904DY-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 8-SOIC 3,194 1:$2.52000
25:$1.94400
100:$1.76400
250:$1.58400
500:$1.36800
1,000:$1.15200
SI4904DY-T1-GE3 Vishay Siliconix MOSFET N-CH 40V 8-SOIC 3,194 1:$2.52000
25:$1.94400
100:$1.76400
250:$1.58400
500:$1.36800
1,000:$1.15200
SI4564DY-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 10A，9.2A
开态Rds（最大）@ Id, Vgs @ 25° C: 17.5 毫欧 @ 8A，10V
Id 时的 Vgs(th)（最大）: 2V @ 250µA
闸电荷(Qg) @ Vgs: 31nC @ 10V
输入电容 (Ciss) @ Vds: 855pF @ 20V
功率 - 最大: 3.1W，3.2W
安装类型: 表面贴装
封装/外壳: 8-SOIC（0.154"，3.90mm 宽）
供应商设备封装: 8-SOICN
包装: 剪切带 (CT)
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