分离式半导体产品 PMGD370XN,115品牌、价格、PDF参数

PMGD370XN,115 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PMGD370XN,115 NXP Semiconductors MOSFET N-CH TRENCH DL 30V SOT363 9,000 3,000:$0.11900
6,000:$0.11200
15,000:$0.10400
30,000:$0.09600
75,000:$0.09200
150,000:$0.08900
PMGD370XN,115 NXP Semiconductors MOSFET N-CH TRENCH DL 30V SOT363 14,411 1:$0.48000
10:$0.37800
25:$0.31880
100:$0.25990
250:$0.21528
500:$0.17784
1,000:$0.13320
PMGD370XN,115 NXP Semiconductors MOSFET N-CH TRENCH DL 30V SOT363 14,411 1:$0.48000
10:$0.37800
25:$0.31880
100:$0.25990
250:$0.21528
500:$0.17784
1,000:$0.13320
PMGD780SN,115 NXP Semiconductors MOSFET N-CH TRENCH DL 60V SOT363 3,000 3,000:$0.11900
6,000:$0.11200
15,000:$0.10400
30,000:$0.09600
75,000:$0.09200
150,000:$0.08900
PMGD780SN,115 NXP Semiconductors MOSFET N-CH TRENCH DL 60V SOT363 5,419 1:$0.48000
10:$0.37800
25:$0.31880
100:$0.25990
250:$0.21528
500:$0.17784
1,000:$0.13320
PMGD370XN,115 • PDF参数
类别: 分离式半导体产品
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 740mA
开态Rds(最大)@ Id, Vgs @ 25° C: 440 毫欧 @ 200mA,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 650nC @ 4.5V
输入电容 (Ciss) @ Vds: 37pF @ 25V
功率 - 最大: 410mW
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: 6-TSSOP
包装: 带卷 (TR)