分离式半导体产品 FDC8602品牌、价格、PDF参数

FDC8602 • 品牌、价格
元器件型号 厂商 描述 数量 价格
FDC8602 Fairchild Semiconductor MOSFET N-CH DUAL 100V 6-SSOT 5,565 1:$1.16000
10:$1.02100
25:$0.92160
100:$0.80640
250:$0.70720
500:$0.62720
1,000:$0.49600
FDC8602 Fairchild Semiconductor MOSFET N-CH DUAL 100V 6-SSOT 5,565 1:$1.16000
10:$1.02100
25:$0.92160
100:$0.80640
250:$0.70720
500:$0.62720
1,000:$0.49600
FDC8602 Fairchild Semiconductor MOSFET N-CH DUAL 100V 6-SSOT 3,000 3,000:$0.44800
6,000:$0.42560
15,000:$0.40960
30,000:$0.39680
75,000:$0.38400
FDG6318P Fairchild Semiconductor MOSFET P-CH DUAL 20V SC70-6 5,935 1:$0.57000
10:$0.48400
25:$0.42400
100:$0.36280
250:$0.31464
500:$0.26650
1,000:$0.20545
FDG6318P Fairchild Semiconductor MOSFET P-CH DUAL 20V SC70-6 5,935 1:$0.57000
10:$0.48400
25:$0.42400
100:$0.36280
250:$0.31464
500:$0.26650
1,000:$0.20545
FDG6318P Fairchild Semiconductor MOSFET P-CH DUAL 20V SC70-6 3,000 3,000:$0.18197
6,000:$0.17023
15,000:$0.15849
30,000:$0.15027
75,000:$0.14675
150,000:$0.14088
FDC8602 • PDF参数
类别: 分离式半导体产品
FET 型: 2 个 N 沟道(双)
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 1.2A
开态Rds(最大)@ Id, Vgs @ 25° C: 350 毫欧 @ 1.2A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 2nC @ 10V
输入电容 (Ciss) @ Vds: 70pF @ 50V
功率 - 最大: 690mW
安装类型: 表面贴装
封装/外壳: SOT-23-6 细型,TSOT-23-6
供应商设备封装: 6-SSOT
包装: Digi-Reel®