分离式半导体产品 SI1903DL-T1-GE3品牌、价格、PDF参数

SI1903DL-T1-GE3 • 品牌、价格
元器件型号 厂商 描述 数量 价格
SI1903DL-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 410MA SC70-6 565 1:$0.63000
25:$0.43880
100:$0.37620
250:$0.32492
500:$0.27930
1,000:$0.21660
SI1903DL-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 410MA SC70-6 565 1:$0.63000
25:$0.43880
100:$0.37620
250:$0.32492
500:$0.27930
1,000:$0.21660
SI1903DL-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 410MA SC70-6 0 3,000:$0.17670
6,000:$0.16530
15,000:$0.15390
30,000:$0.14535
75,000:$0.14250
150,000:$0.13680
SI5933CDC-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 1206-8 428 1:$0.61000
25:$0.42360
100:$0.36300
250:$0.31352
500:$0.26950
1,000:$0.20900
SI5933CDC-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 1206-8 428 1:$0.61000
25:$0.42360
100:$0.36300
250:$0.31352
500:$0.26950
1,000:$0.20900
SI5933CDC-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 1206-8 0 3,000:$0.17050
6,000:$0.15950
15,000:$0.14850
30,000:$0.14025
75,000:$0.13750
150,000:$0.13200
SI1903DL-T1-GE3 • PDF参数
类别: 分离式半导体产品
FET 型: 2 个 P 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 410mA
开态Rds(最大)@ Id, Vgs @ 25° C: 995 毫欧 @ 410mA,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 1.8nC @ 4.5V
输入电容 (Ciss) @ Vds: -
功率 - 最大: 270mW
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: SC-70-6
包装: Digi-Reel®